The characteristics of nitrogen implanted GaAs

碩士 === 國立交通大學 === 電子物理系 === 87 === LEC(Liquid Encapsulated Czochralski) and semi-insulating GaAs(100) wafers are implanted at the room temperature with 160 keV N+ to a fluence of cm-2. Rapid thermal annealing is performed at 950℃ for 30 seconds while furnace anneali...

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Bibliographic Details
Main Authors: May-May Huang, 黃郁媄
Other Authors: Jenn-Fang Chen
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/61071936712347306992