The characteristics of nitrogen implanted GaAs
碩士 === 國立交通大學 === 電子物理系 === 87 === LEC(Liquid Encapsulated Czochralski) and semi-insulating GaAs(100) wafers are implanted at the room temperature with 160 keV N+ to a fluence of cm-2. Rapid thermal annealing is performed at 950℃ for 30 seconds while furnace anneali...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/61071936712347306992 |