Study of Schottky diode made of Mo Silicide as an Infrared Sensor
碩士 === 國立交通大學 === 電子物理系 === 87 === This study uses the standard IC process and silicon anisotropic etching technique to fabricate an infrared sensor.This device uses n type silicon combined with Mo-silicide as a Schottky barrier thermistor (SBT),which has very large temperature dependenceof reverse-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67564191184357880074 |