Deep Level Transient Spectroscopy of In iso-doped GaN Films
碩士 === 國立交通大學 === 電子物理系 === 87 === The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/51439982954111923713 |