| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 87 === The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations of 8.97×1013 and 8.49×1014 cm-3, respectively. When the sample is lightly doped with In, we have found that the 0.149 eV trap is disappeared and the concentration of 0.601 eV trap is decreased significantly by approximately an order of magnitude. Our results indicate the use of In iso-doped method in GaN growth could effectively improve ideality factor, Schottky barrier height and reduce the deep-level defect concentrations.
|
|---|
