Deep Level Transient Spectroscopy of In iso-doped GaN Films
碩士 === 國立交通大學 === 電子物理系 === 87 === The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations...
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ndltd-TW-087NCTU04290292016-07-11T04:13:36Z http://ndltd.ncl.edu.tw/handle/51439982954111923713 Deep Level Transient Spectroscopy of In iso-doped GaN Films 銦摻雜氮化鎵薄膜之深植能階研究 Cheng Chung Tsai 蔡政忠 碩士 國立交通大學 電子物理系 87 The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations of 8.97×1013 and 8.49×1014 cm-3, respectively. When the sample is lightly doped with In, we have found that the 0.149 eV trap is disappeared and the concentration of 0.601 eV trap is decreased significantly by approximately an order of magnitude. Our results indicate the use of In iso-doped method in GaN growth could effectively improve ideality factor, Schottky barrier height and reduce the deep-level defect concentrations. Wei-Kuo Chen 陳衛國 1999 學位論文 ; thesis 54 zh-TW |
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碩士 === 國立交通大學 === 電子物理系 === 87 === The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations of 8.97×1013 and 8.49×1014 cm-3, respectively. When the sample is lightly doped with In, we have found that the 0.149 eV trap is disappeared and the concentration of 0.601 eV trap is decreased significantly by approximately an order of magnitude. Our results indicate the use of In iso-doped method in GaN growth could effectively improve ideality factor, Schottky barrier height and reduce the deep-level defect concentrations.
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Wei-Kuo Chen |
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Wei-Kuo Chen Cheng Chung Tsai 蔡政忠 |
author |
Cheng Chung Tsai 蔡政忠 |
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Cheng Chung Tsai 蔡政忠 Deep Level Transient Spectroscopy of In iso-doped GaN Films |
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Cheng Chung Tsai |
title |
Deep Level Transient Spectroscopy of In iso-doped GaN Films |
title_short |
Deep Level Transient Spectroscopy of In iso-doped GaN Films |
title_full |
Deep Level Transient Spectroscopy of In iso-doped GaN Films |
title_fullStr |
Deep Level Transient Spectroscopy of In iso-doped GaN Films |
title_full_unstemmed |
Deep Level Transient Spectroscopy of In iso-doped GaN Films |
title_sort |
deep level transient spectroscopy of in iso-doped gan films |
publishDate |
1999 |
url |
http://ndltd.ncl.edu.tw/handle/51439982954111923713 |
work_keys_str_mv |
AT chengchungtsai deepleveltransientspectroscopyofinisodopedganfilms AT càizhèngzhōng deepleveltransientspectroscopyofinisodopedganfilms AT chengchungtsai yīncànzádànhuàjiābáomózhīshēnzhínéngjiēyánjiū AT càizhèngzhōng yīncànzádànhuàjiābáomózhīshēnzhínéngjiēyánjiū |
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1718343559589920768 |