Prepatation and properites of AgGaS2 thin films by Excimer Laser Deposition
碩士 === 國立交通大學 === 光電工程所 === 87 === We have successfully grown AgGaS2 thin films on quartz glass substrates by means of KrF excimer laser deposition from a mixture target of Ag2S and Ga2S3. We change substrate temperature from 430℃ to 570℃ and pulse repetation rate from 10 to 40 Hz. From X...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68901029482761453517 |