Characteristics of Mg-doped GaN by diffusion process
碩士 === 國立中央大學 === 物理研究所 === 87 === We have successfully doped Mg into undoped GaN epitaxial film by diffusion process and converted it to p-type conductivity. This p-type GaN film is measured by Hall effect and found with carrier concentration and mobility about 61018 cm-3 and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44281902674106594731 |