TEM Investigation on As Precipitation in Low-Temperature Grown III-V Arsenides
博士 === 國立中央大學 === 電機工程研究所 === 87 === This dissertation includes a general qualitative model, involving both vacancy and As antisite defects to model the distribution of As precipitates in LT-grown III-V arsenides after annealing. During the thermal treatment, excess As tends to diffuse from a As-ric...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/19320131510806492664 |