Thin-Film LED and Transistor Fabricated by Using a
碩士 === 國立中央大學 === 電機工程研究所 === 87 === The conventional plasma-enhanced chemical vapor deposition (PECVD) system with an additional stainless steel (s.s.) mesh attached to cathode was used to fabricate Si-based thin-film light-emitting diode (TFLED) at a low substrate temperature (~180 ℃). The obtaine...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73885707846186406838 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 87 === The conventional plasma-enhanced chemical vapor deposition (PECVD) system with an additional stainless steel (s.s.) mesh attached to cathode was used to fabricate Si-based thin-film light-emitting diode (TFLED) at a low substrate temperature (~180 ℃). The obtained TFLED had a brightness (B) of 1060 cd/m2 at an injection current density (J) of 600 mA/cm2 and a threshold voltage (Vth) of 12.6 V, which were much better than those of 330 cd/m2 and 18.5 V for an amorphous Si-based TFLED fabricated by the same PECVD system without a s.s. mesh. The improvements of opto-electronic characteristics for this TFLED would be mainly due to the used s.s. mesh, which would result in a deposited film with less plasma damages.
The thin-film transistor (TFT) fabricated with the PECVD system with (without) a s.s. mesh had a saturation current of 22 (2.8) mA when its VGS was 25 V. We also found that the threshold voltage of the TFT fabricated with the PECVD system with (without) a s.s. mesh was 8 (13) V. The field-effect mobility was improved from 0.13 cm2/V-s to 0.44 cm2/V-s with the employed s.s. mesh. The improvements of device characteristics maybe result from the good-quality films deposited with the PECVD system having an additional s.s. mesh.
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