The Research of Scaling Theory for Silicon-On-Insulator MOSFET's
碩士 === 國立中山大學 === 電機工程學系 === 87 === Abstract A scale down theorem for an ultra-thin film SOI (Silicon-On-Insulator) MOSFET is studied in this thesis. First, we build an improved analytical model of the threshold voltage shifting and subthreshold factor with considera...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00362551250350635993 |