The Study on Characteristics of a 3-Wide SOI MOSFET
碩士 === 國立中山大學 === 電機工程學系 === 87 === In this thesis, we discuss the characteristics of a new SOI device with triple-gates structure proposed in [32], and hereinafter we call it - 3W SOI1. In order to compare the current driving ability, we change the 3W SOI1 structure with non-recessed si...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27069468500959871923 |