STUDY ON THE MBE GROWTH OF GASB THIN FILM
碩士 === 國立中山大學 === 電機工程學系 === 87 === The MBE (Molecular beam epitaxy) growth and characteristics of gallium antimonide are studied mainly through the flux control of sources and substrate temperature. The theoretical description of lattice-matched (GaSb/GaSb) and lattice-mismatched (GaSb/GaAs) layer...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79974231115102726152 |