STUDY ON THE MBE GROWTH OF GASB THIN FILM

STUDY ON THE MBE GROWTH OF GASB THIN FILM

碩士 === 國立中山大學 === 電機工程學系 === 87 === The MBE (Molecular beam epitaxy) growth and characteristics of gallium antimonide are studied mainly through the flux control of sources and substrate temperature. The theoretical description of lattice-matched (GaSb/GaSb) and lattice-mismatched (GaSb/GaAs) layer...

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Bibliographic Details
Main Authors:	Yu-Hong Jen, 任聿弘
Other Authors:	Ueng Herng-Yih
Format:	Others
Language:	zh-TW
Published:	1999
Online Access:	http://ndltd.ncl.edu.tw/handle/79974231115102726152

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