Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System
碩士 === 國立清華大學 === 材料科學工程學系 === 87 === Amorphous carbon nitride thin films were synthesized in a mixture of C2H2, N2 and Ar as the precursor by the electron cyclotron resonance chemical vapor deposition system equipped with a dc bias to the substrate of silicon. The film prepared as such w...
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ndltd-TW-087NTHU01590522016-07-11T04:13:20Z http://ndltd.ncl.edu.tw/handle/91315801452337760377 Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System 以ECR-CVD系統合成非晶質碳氮膜之電子場發射性質 Xein-Wien Liu 劉獻文 碩士 國立清華大學 材料科學工程學系 87 Amorphous carbon nitride thin films were synthesized in a mixture of C2H2, N2 and Ar as the precursor by the electron cyclotron resonance chemical vapor deposition system equipped with a dc bias to the substrate of silicon. The film prepared as such was further treated in an argon plasma obviously to increase the surface roughness to became a better electron emitter. The onset emission field as low as 3.5 Vμm-1 can be achieved (after Ar+ plasma sputtering for 3 min ) in comparison with other carbon-based electron field emitters. This fact is mainly attributed to the increase of film roughness, decrease of film thickness, and removal of hydrogen from the film. Plasma chemistry was investigated by OES system during the deposition process. The film growth rate that can reach is as high as ~0.5 μm/min. Raman scattering spectra show that all the amorphous carbon nitride films have a graphite structure. The strong absorption band in the range 1000-1700 cm-1 of the FTIR spectrum is the direct evidence of the nitrogen that incorporated into carbon network. XPS and AES analysis shows N/C=0.35 of amorphous carbon nitride film and there are two different phases of the carbon nitride compound in the film. Han C. Shih 施漢章 1999 學位論文 ; thesis 90 en_US |
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碩士 === 國立清華大學 === 材料科學工程學系 === 87 === Amorphous carbon nitride thin films were synthesized in a mixture of C2H2, N2 and Ar as the precursor by the electron cyclotron resonance chemical vapor deposition system equipped with a dc bias to the substrate of silicon. The film prepared as such was further treated in an argon plasma obviously to increase the surface roughness to became a better electron emitter. The onset emission field as low as 3.5 Vμm-1 can be achieved (after Ar+ plasma sputtering for 3 min ) in comparison with other carbon-based electron field emitters. This fact is mainly attributed to the increase of film roughness, decrease of film thickness, and removal of hydrogen from the film. Plasma chemistry was investigated by OES system during the deposition process. The film growth rate that can reach is as high as ~0.5 μm/min. Raman scattering spectra show that all the amorphous carbon nitride films have a graphite structure. The strong absorption band in the range 1000-1700 cm-1 of the FTIR spectrum is the direct evidence of the nitrogen that incorporated into carbon network. XPS and AES analysis shows N/C=0.35 of amorphous carbon nitride film and there are two different phases of the carbon nitride compound in the film.
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author2 |
Han C. Shih |
author_facet |
Han C. Shih Xein-Wien Liu 劉獻文 |
author |
Xein-Wien Liu 劉獻文 |
spellingShingle |
Xein-Wien Liu 劉獻文 Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
author_sort |
Xein-Wien Liu |
title |
Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
title_short |
Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
title_full |
Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
title_fullStr |
Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
title_full_unstemmed |
Synthesis and Electron Field Emission Properties of Amorphous Carbon Nitride Films by ECR-CVD System |
title_sort |
synthesis and electron field emission properties of amorphous carbon nitride films by ecr-cvd system |
publishDate |
1999 |
url |
http://ndltd.ncl.edu.tw/handle/91315801452337760377 |
work_keys_str_mv |
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