| Summary: | 碩士 === 國立清華大學 === 動力機械工程學系 === 87 === An axisymmetric cylindrical numerical model is adopted in this study to simulate the CVD deposition process, based on the transport equations for mass, momentum, energy and species. The chemistry mechanism of this study is to investigate the deposition of silicon dioxide（ ）films using tetraethoxysilane（ , TEOS）, ozone（ ）and carrier gas. The deposition process is assumed to be in the surface reaction-limited regime. A new chemical kinetic mechanisms model is employed in the calculation.
The uniform film deposition rate is desirable in the CVD process. In order to produce more uniform film, the relation between deposition rate and operating conditions need to be explored. The variation of three operating conditions, such as wafer temperature, operating pressure and gap spacing, are discussed in this study.
For different wafer temperature, the deposition rate is found to increase with increasing wafer temperature, but at higher temperature deposition rate decreases with further increases in temperature. For different operating pressure, the deposition rate increases with increasing operating pressure at the same wafer temperature. For the cases of different gap spacing height cases, the deposition rate is reduced where the gap spacing height is increased due to the lower level of the mass diffusivity.
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