Heavily Boron Doped Silicon Layer Etching and Stress for MEMS Application

碩士 === 國立清華大學 === 電子工程研究所 === 87 === This thesis is dedicated to comprehensive study on etching and stress of the high doping P+ silicon film. We try to use four kinds of anisotropic etching solution to find out the suitable one in etching P+ silicon film. For film roughness and etching selectivity,...

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Bibliographic Details
Main Authors: Jiun-Ren Lai, 賴俊仁
Other Authors: Prof. Ruey-Shing Huang
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/77220602056446718274