Heavily Boron Doped Silicon Layer Etching and Stress for MEMS Application

• Main Authors: Jiun-Ren Lai, 賴俊仁
• Other Authors: Prof. Ruey-Shing Huang
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/77220602056446718274

碩士 === 國立清華大學 === 電子工程研究所 === 87 === This thesis is dedicated to comprehensive study on etching and stress of the high doping P+ silicon film. We try to use four kinds of anisotropic etching solution to find out the suitable one in etching P+ silicon film. For film roughness and etching selectivity, EDP solution has good performances. In addition, we try to use annealing to fabricate low stress and flat beams. We focus on the influence of annealing parameters to uniform stress and gradient stress of the film, discussing what happens to the bending moment of the cantilever beams. Finally, We have used this technology to fabricate a microstructure of "particle filter".