Photoelectrochemical etching in GaN
碩士 === 國立清華大學 === 電機工程學系 === 87 === Etching in GaN is an important priori for device processing due to the chemical inertness, hardness, and easily introducing damage in device process. The plasma/energetic ion etching with high reactive gas will provide a smooth etching bottom and vertic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75265564757670744155 |