The application of photo-assisted cryogenic etching in SiGe strain-layers superlattice
碩士 === 國立清華大學 === 電機工程學系 === 87 === An anisotropic and low damage cryogenic etching of Si0.7Ge0.3/Si strained-layer superlattices by an ArF (193 nm) excimer laser assisted Cl2 gas was demonstrated. At low temperatures, photo-assisted etching can provide a better etching rate and largely i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38285824609798363326 |