The Study of Silicon-Based High-Frequency Devices
碩士 === 國立清華大學 === 電機工程學系 === 87 === Silicon-based high-frequency MOS transistors of active devices are described. Recently, by using the refractory material, metal gate MOS transistor is more popular than the traditional salicide one. It is straightforward that metal gate structure would...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95597076698840839512 |