| Summary: | 碩士 === 國立清華大學 === 電機工程學系 === 87 === Silicon-based high-frequency MOS transistors of active devices are described. Recently, by using the refractory material, metal gate MOS transistor is more popular than the traditional salicide one. It is straightforward that metal gate structure would take a lot of advantages of device performance, such as higher signal transmission speed, no gate depletion effect, and more suitable for deep sub-micron MOS devices.
Here we try to develop the metal gate structure by using selective CVD-W. With different type wafers used, the DC and AC characteristics of each MOS transistor we designed are measured and compared.
In this thesis, we first introduce the reason of using silicon as devices base and the basic concepts of selective CVD-W and SOI wafers, then the experiment details are described in Chapter 2. In Chapter 3, we introduce our measurement equipment and present the measurement results of our poly-silicon gate devices, further, we make a case study for our W-CVD gate devices. Chapter 4 concludes the results we measured. At last, we make several suggestions for future development in Chapter 5.
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