The Study of Silicon-Based High-Frequency Devices
碩士 === 國立清華大學 === 電機工程學系 === 87 === Silicon-based high-frequency MOS transistors of active devices are described. Recently, by using the refractory material, metal gate MOS transistor is more popular than the traditional salicide one. It is straightforward that metal gate structure would...
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ndltd-TW-087NTHU04420942015-10-13T11:46:55Z http://ndltd.ncl.edu.tw/handle/95597076698840839512 The Study of Silicon-Based High-Frequency Devices 矽基高頻元件之研究 Yung-Sheng Chen 陳永勝 碩士 國立清華大學 電機工程學系 87 Silicon-based high-frequency MOS transistors of active devices are described. Recently, by using the refractory material, metal gate MOS transistor is more popular than the traditional salicide one. It is straightforward that metal gate structure would take a lot of advantages of device performance, such as higher signal transmission speed, no gate depletion effect, and more suitable for deep sub-micron MOS devices. Here we try to develop the metal gate structure by using selective CVD-W. With different type wafers used, the DC and AC characteristics of each MOS transistor we designed are measured and compared. In this thesis, we first introduce the reason of using silicon as devices base and the basic concepts of selective CVD-W and SOI wafers, then the experiment details are described in Chapter 2. In Chapter 3, we introduce our measurement equipment and present the measurement results of our poly-silicon gate devices, further, we make a case study for our W-CVD gate devices. Chapter 4 concludes the results we measured. At last, we make several suggestions for future development in Chapter 5. Klaus Yung-Jane Hsu 徐永珍 1999 學位論文 ; thesis 68 en_US |
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碩士 === 國立清華大學 === 電機工程學系 === 87 === Silicon-based high-frequency MOS transistors of active devices are described. Recently, by using the refractory material, metal gate MOS transistor is more popular than the traditional salicide one. It is straightforward that metal gate structure would take a lot of advantages of device performance, such as higher signal transmission speed, no gate depletion effect, and more suitable for deep sub-micron MOS devices.
Here we try to develop the metal gate structure by using selective CVD-W. With different type wafers used, the DC and AC characteristics of each MOS transistor we designed are measured and compared.
In this thesis, we first introduce the reason of using silicon as devices base and the basic concepts of selective CVD-W and SOI wafers, then the experiment details are described in Chapter 2. In Chapter 3, we introduce our measurement equipment and present the measurement results of our poly-silicon gate devices, further, we make a case study for our W-CVD gate devices. Chapter 4 concludes the results we measured. At last, we make several suggestions for future development in Chapter 5.
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author2 |
Klaus Yung-Jane Hsu |
author_facet |
Klaus Yung-Jane Hsu Yung-Sheng Chen 陳永勝 |
author |
Yung-Sheng Chen 陳永勝 |
spellingShingle |
Yung-Sheng Chen 陳永勝 The Study of Silicon-Based High-Frequency Devices |
author_sort |
Yung-Sheng Chen |
title |
The Study of Silicon-Based High-Frequency Devices |
title_short |
The Study of Silicon-Based High-Frequency Devices |
title_full |
The Study of Silicon-Based High-Frequency Devices |
title_fullStr |
The Study of Silicon-Based High-Frequency Devices |
title_full_unstemmed |
The Study of Silicon-Based High-Frequency Devices |
title_sort |
study of silicon-based high-frequency devices |
publishDate |
1999 |
url |
http://ndltd.ncl.edu.tw/handle/95597076698840839512 |
work_keys_str_mv |
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