Physical Measurement of Electroless-Deposited Cu/TiN/SiO2/Si Structure
碩士 === 國立清華大學 === 電機工程學系 === 87 === Abstract Copper was electroless deposited on the diffusion barrier TiN, and TiN was deposited in a Ar/N2 discharge by reactively sputter. Analysis of resistivity, crystal orientation, grain size,and inter-diffusion phenomena were carrie...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/52808571074088824600 |