Effects of Neutron Intrinsic Gettering (NIG) on Electrical
碩士 === 國立清華大學 === 工程與系統科學系 === 87 === There are basically three parts included in this research: 1. The effects of neutron intrinsic gettering in MOS Devices; 2. Electrical property improvement by NIG in MOS devices with Si3N4 passivation. 3. The effect of arsenic penetration on the elect...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46834516335006966587 |