Effects of Neutron Intrinsic Gettering (NIG) on Electrical
碩士 === 國立清華大學 === 工程與系統科學系 === 87 === There are basically three parts included in this research: 1. The effects of neutron intrinsic gettering in MOS Devices; 2. Electrical property improvement by NIG in MOS devices with Si3N4 passivation. 3. The effect of arsenic penetration on the elect...
Main Authors: | Ching-Sang Chuang, 莊景桑 |
---|---|
Other Authors: | Kuei-Shu Chang-Liao |
Format: | Others |
Language: | zh-TW |
Published: |
1999
|
Online Access: | http://ndltd.ncl.edu.tw/handle/46834516335006966587 |
Similar Items
-
The Study of Fast Neutron Irradiation on Intrinsic Gettering Processes
by: Wei Jiunn-Hwan, et al.
Published: (1999) -
Effects of intrinsic gettering on basic device performance
by: HUANG, FU-JIN, et al.
Published: (1986) -
Study on the application of fast-neutron-irradiation intrinsic gettering technique to MOS capacitor fabrication
by: Jing-Ting Chiou, et al.
Published: (1999) -
Pricing the TAIEX option with GARCH-NIG Model
by: Yu -Ching Yeh, et al.
Published: (2004) -
On The NIG-GARCH Option Pricing Model
by: Chao-Hui Huang, et al.
Published: (2005)