| Summary: | 碩士 === 國立臺灣大學 === 化學工程學研究所 === 87 === Low dielectric constant polymers have attracted extensive interest because they can minimize propagation delay, interconnect capacitance, and crosstalk between signal lines for deep sub-micro IC devices. Novel IC devices based on the structure of low dielectric constant polymers/Cu has been proposed recently by using chemical mechanical polishing (CMP) technology. Fundamental study on the CMP characteristics of low dielectric constant polymers is very important for both scientific interest and practical applications.
In this study, the CMP characteristics of the three different kinds of low dielectric constant polymers were investigated. The polymers included (1) inorganic poly(silsesquioxane) :HSQ, (2) organic poly(silsesquioxanes): HOSP and MSQ, and (3) poly(arylene ethers): PAE-2 and Flare 2.0. Different slurry formulations were used to investigate the effects of the abrasive, surfactant, and pH value on the removal rates of the polished films. The studied slurries include SS-25, A1, WA400, 8104/H2O, and 8105/H2O. The surfactants used in this study were non-ionic Triton X-100, anionic DSSS, and cationic TMAH. The experimental results showed that both the molecular structures of the studied polymers and the slurry formulations had significant effects on the polishing results. For the slurry effect, the removal rate is affected by abrasive hardness, the electrostatic interaction between the abrasive and polymer surface, and the surfactant. For the molecular structure effect, the film hardness, and the hydropHobicity of polymer surface are responsible for the polishing results. The CMP parameters were also used to study their effects on the HSQ polishing results. The relationships between the removal rate, slurry property, and film properties are discussed in this thesis.
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