鈦鎳形狀記憶合金薄膜與矽晶圓界面之研究
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 87 === The interfacial reaction of TiNi thin film with (111)Si wafer indicates that the island regions of NiSi2 compound appear after 400∼500℃ annealing. When the temperature is raised to 600℃,the islands form a continuous layer and have a twin or epitaxial relation...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98928555456977035644 |