Modeling of PD-SOI Dynamic Threshold Voltage MOS (DTMOS) Devices

碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === In this thesis, analytical models for partially-depleted SOI dynamic-threshold MOS (DTMOS) devices are described. In Chapter 2, using the proposed quasi-2D approach, a closed-form threshold-voltage model for short-channel PD SOI DTMOS devic...

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Bibliographic Details
Main Authors: Kuo-Hua Yuan, 袁國華
Other Authors: James B. Kuo
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/17904169823882612738