The fabrication of RTCVD reactor and SiGeC module technology
碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === Due to the increase of wafer diameter to 12” and 18”, the batch process transfers to the integrated cluster tools of single wafer process gradually; hence we design and assemble a system that combines MESC and 200mm rapid thermal processor....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40369238559921904341 |