The fabrication of RTCVD reactor and SiGeC module technology

• Main Authors: Y.D.Tseng, 曾揚玳
• Other Authors: C.W.Liu
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/40369238559921904341

碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === Due to the increase of wafer diameter to 12” and 18”, the batch process transfers to the integrated cluster tools of single wafer process gradually; hence we design and assemble a system that combines MESC and 200mm rapid thermal processor. Finally, we test the RTO (rapid thermal oxide) process. A process integration base on RTP must have nice thermal control, uniformity of temperature, vacuum, short production cycle time, and is compatible with cluster tool. In chapter 1, we will introduce the characteristics and results our system. The SiGe heterojunction bipolar transistor shows considerable potential for high-frequency application, and Si1-x-yGexCy alloys offer great flexibility in tailoring the properties of group IV heterostructures. In this letter, The thermal stability and oxidation of Si/Si1-x-yGexCy/Si quantum wells was studied by high resolution x-ray diffraction, Fourier transform infrared spectroscopy, and defect ecthing. There are different pathways of strain relaxation in this material system, depending on the annealing temperature. The lattice structure of Si1-x-yGexCy was as stable as the Si1-xGex alloys at the annealing temperature of 800℃ for 2hr. At the annealing temperature of 900℃ for 2hr, the structures of both Si1-x-yGexCy and Si1-xGex started to relax. The addition of C enhanced the Ge outdiffusion in Si1-x-yGexCy, as compared to Si1-xGex. The Ge also outdiffused relatively fast compared to C in Si1-x-yGexCy alloys. For the annealing temperature of 950℃ and 1000℃ for 2hr, the Si1-xGex and Si1-x-yGexCy continued to relax. The detail will be shown in chapter 2. In chapter 3, we will use oxidation to further identify the effect of carbon in Si1-xGex alloys. The interstitial silicon injection from oxidation changes the diffusion of Ge and C in Si1-x-yGexCy alloys conclusively. Finally, In chapter 4 we will discuss the measurement of relaxation in crystal, and the problems of thin film characterization in x-ray analysis.