The Growth and Characterization of the Rapid Thermal Oxide ans Laser-Induced Oxide
碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === As the dimension of devices in ULSI is down scaling, in order to decrease the dopant redistribution or grow the thin gate oxide, rapid thermal processing, base on rapid heating of wafers using high energy laser, play an important role in the ULSI tech...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16660218863387834926 |