Simulation and Measurement of High Speed MOSFET Device
碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === Two main topics are discussed in this thesis. One is about subthreshold current and transient behavior of long channel devices in chapter2 and 3, respectively. The other main topic is about frequency-dependent C-V curves for oxide thickness extraction...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75836360138368736508 |