| Summary: | 碩士 === 國立臺灣大學 === 機械工程學研究所 === 87 === Silane is an important gas used for CVD process in semiconductor industries, but the flue gas contain unreactive gases which are treated by burner directly. Silane may cause spontaneous ignition in atmosphere, and the product silicon dioxide could deposit near in the atomizer. The spontaneous reaction of silane is occurred in the condition of silane and oxygen both are in a low concentration. In order to avoid spontaneous reaction, nitrogen, carbon dioxide or other inner gases are usually used as inhibitors. The results show that the required concentration of oxygen causing the spontaneous reaction could be raised by the injection of inert gas.
This paper discusses the reaction mechanism of silane. The results show that the influence of silane and oxygen both are directly proportion to the reaction rate. And, the concentration of silane is more dominant than oxygen. In addition, PHOENIC was used to simulate the saline combustion in the burner. The results show the silane and oxygen are vigorous mixing near the atomizer, and the silicon dioxide could occur near the atomizer. If nitrogen was used to dilute and separate silane from oxygen, the chemical reaction will occur in the downstream flow field. By using the reaction mechanism of silane and dilute gas to avoid spontaneous ignition near the atomizer can be a guide to design the suitable burner for the combustion control of emission in a semicon-ductor clean room.
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