Modeling of the drain current characteristics of buried-channel and silicon-on-insulator MOSFETs
博士 === 國立臺灣科技大學 === 電子工程系 === 87 === Theortical studies on modeling of the characteristics of buried-channel (BC) and silicon-on-insulator (SOI) MOSFETs have been made. These MOSFET models are based on the quasi-two-dimensional Poisson equation and include the improtantshort-channel effects....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01165339733667013265 |