Studies on the Characteristics of Oligomeric Furan Metal Oxide Semiconductor Field-Effect Transistor
碩士 === 大同工學院 === 化學工程研究所 === 87 === The characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with oligomeric furan as semiconducting layer were investigated. In this study, the field-effect transistors (FETs) with oligomelic furan film as p-type semic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83343163687690264799 |