有機金屬化學氣相沉積法成長氮化鎵薄膜之特性分析
碩士 === 中正理工學院 === 電子工程研究所 === 88 === In this study, a low pressure metal organic chemical vapor deposition (LPCVD) system was employed to epitaxy GaN thin film on the sapphire substrate. By using of SiH4 and Cp2Mg as the correspondent N- type and P-type dopant, the doping effects were investigated....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23619789838857090936 |