有機金屬化學氣相沉積法成長氮化鎵薄膜之特性分析

• Main Authors: Yuan-TzuTao, 袁子滔
• Other Authors: 周述村
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/23619789838857090936

碩士 === 中正理工學院 === 電子工程研究所 === 88 === In this study, a low pressure metal organic chemical vapor deposition (LPCVD) system was employed to epitaxy GaN thin film on the sapphire substrate. By using of SiH4 and Cp2Mg as the correspondent N- type and P-type dopant, the doping effects were investigated. Experimental results indicate that a high-quality GaN grown film with the correspondent Hall concentration, electron mobility and X-ray full width at half maximum(FWHM) as 1.67×10E17 cm-3, 611 cm2/V.s and 192 sec, is obtained by controlling the SiH4 flow rate at 1sccm. When the doping ratio (Si/Ga) between 4.31×10E-6 and 9.69×10E-6, a stable n-type doping concentration of 1.7~2.7×10E17 cm-3 is observed During the Cp2Mg heavy doped P-type GaN thin film epitaxy period, a dominant three-dimensional growth is found. When the Cp2Mg flow rate is as high as 450 sccm； in which the Mg/Ga ratio is around 0.6 wt% ； we can obtain better crystal quality. Finally, after the followed different thermal annealing process, we report that p-type GaN epitaxial films with the resistivity as low as 3.22 ohm-cm and the carrier concentration as high as 1.8×10E17 cm-3 as well as the PL FWHM as narrow as 473A are obtained by the optimum thermal annealing condition of at 900℃ for 10 min.