Study of the influence of process-induced mechanical stress on MOS devices
碩士 === 中正理工學院 === 電子工程研究所 === 88 === The purpose of this work is to study the influence of parametric shift and reliability degradation of MOS devices due to external mechanical stress and consider the feasibility of utilizing MOS devices as stress sensors. Experimental results indicate t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66165247990764034487 |