Photoenhanced Chemical Etching Study of GaN by Alkali Solution
碩士 === 中正理工學院 === 應用化學研究所 === 88 === The wide band gap semiconductor GaN with a direct band gap at 3.5eV (wurtzite phase) has attracted a lot of attention in recent years. GaN, which emits blue and ultraviolet lights, can be used to make diodes and laser diodes. In this experiment, a GaN device wa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93532447174391361901 |