Photoenhanced Chemical Etching Study of GaN by Alkali Solution
碩士 === 中正理工學院 === 應用化學研究所 === 88 === The wide band gap semiconductor GaN with a direct band gap at 3.5eV (wurtzite phase) has attracted a lot of attention in recent years. GaN, which emits blue and ultraviolet lights, can be used to make diodes and laser diodes. In this experiment, a GaN device wa...
Main Authors: | Shih-Hao Sun, 孫世豪 |
---|---|
Other Authors: | Pei-Chung Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/93532447174391361901 |
Similar Items
-
The study of the photoenhanced chemical etching process for the GaN materials
by: 曾建堯
Published: (2004) -
InGaN based MSM Photodetectors Fabricated by Photoenhanced Chemical Wet Etching Technique
by: Chew-Wei Hsu, et al.
Published: (2008) -
InGaN based MSM Photodetectors Fabricated by Photoenhanced Chemical Wet Etching Technique
by: Chew-Wei Hsu, et al.
Published: (2008) -
Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution
by: Nedal Al Taradeh, et al.
Published: (2021-07-01) -
The Study of Chemical Wet Etching on GaN Epi-layer
by: Yung-Yu Lai, et al.
Published: (2013)