The mixed films of TiO2-SiO2 were prepared via Single- Source Chemical Vapor Deposition
碩士 === 國立中正大學 === 化學研究所 === 88 === Abstract In this thesis, the mixed films of TiO2-SiO2 were prepared via metallorganic chemical vapor deposition (MOCVD). A series of precursors were prepared, including (Et3SiO)Ti(OiPr)3, (Et3SiO)2Ti(OiPr)2, (Et3SiO)3Ti(OiPr), (Et3SiO)4Ti, (tBuMe2Si...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83438371269469598075 |