| Summary: | 碩士 === 國立中正大學 === 化學研究所 === 88 === Abstract
In this thesis, the mixed films of TiO2-SiO2 were prepared via metallorganic chemical vapor deposition (MOCVD). A series of precursors were prepared, including (Et3SiO)Ti(OiPr)3, (Et3SiO)2Ti(OiPr)2, (Et3SiO)3Ti(OiPr), (Et3SiO)4Ti, (tBuMe2SiO)Ti(OiPr)3, (tBuMe2SiO)2Ti-(OiPr)2, (tBuMe2SiO)3Ti(OiPr) and (tBuMe2SiO)4Ti by the method previously reported in the literature. All these compounds were characterized by 1H NMR spectra analysis.
Furthermore, (Et3SiO)Ti(OiPr)3 as a precursor was used in low-pressure chemical vapor deposition of thin films. In hot-wall CVD experiment, the mixed films of TiO2-SiO2 was deposited on silicon substrates under low pressure (50 mtorr), or with 99.99% O2 carrier gas (15 torr) in the temperature range 300-600℃. The ratio of TiO2-SiO2 mixed films 1:1 when the temperature were controlled at 400, 450 and 500℃. These films were characterized by XRD, SEM, EDX, ESCA, AES and EPMA. The results show that the ratio of constituents of the mixed film can be controlled by the stoichiometry of the precursor at suitable deposition temperature.
|
|---|
