The oxidation mechanism and the effect of nitrogen implanted silicon substarte
碩士 === 長庚大學 === 電機工程研究所 === 88 === The MOSFET gate engineering becomes an increasingly important technology component in the overall transistor design. The demand for gate engineering has been driven by several technical concerns such as boron penetration, thin oxide reliability, and leakage current...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33867093547497387673 |