Optimization of VCSEL device process and analysis of device characteristics
碩士 === 中原大學 === 電子工程學系 === 88 === Abstract The 850-nm proton-implanted vertical-cavity surface-emitting lasers have been widely used in the Gigabit Ethernet and many other information communication products. In this dissertation, we analyze the characteristics of the 850-nm GaA...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59737128017824182267 |