Study on the Characterization of MOCVD Grown Si-doped GaN Multi-layer Structure
碩士 === 中原大學 === 電子工程學系 === 88 === This study aims essentially at recognizing whether the Si-doped multi-layers can improve the quality of GaN epitaxial films effectively. It is widely reported that slight Si-doping improves the electrical quality of GaN films effectively; i.e., it enhance...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41730624630017078632 |