Study on persistent photoconductivity in GaN film

碩士 === 中原大學 === 電子工程學系 === 88 === Gallium nitride and its ternary alloys with Al and In have become important materials for optoelectronic devices. Their direct band gaps can emit the luminescence from red to ultraviolet, and hold great promise for the construction of semiconductor light-emitting di...

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Bibliographic Details
Main Author: 阮勝彬
Other Authors: Sen-mao Liao
Format: Others
Language:en_US
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/52419929165834755853