Etching Mechanism and Plasma-Induced Damage of High-k (Ba,Sr)TiO3 Thin-Film Capacitors
碩士 === 大葉大學 === 電機工程研究所 === 88 === Recently, much attention has been paid to (Ba,Sr)TiO3 (BST) thin films due to its high permittivity for application of Gbit dynamic random access memories and integrated decoupling capacitors. However, the leakage current of BST has been reported to dras...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65651568538585829726 |