Barrier Properties of TaNx and TaSixNy for Cu Metallization
碩士 === 逢甲大學 === 電機工程學系 === 88 === This thesis studies the barrier properties of TaNx and TaSixNy films for Cu metallization. First, the characteristics of the TaNx films deposited by reactively sputtering with various nitrogen flow ratios were investigated. It is found that the phase of T...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2000
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Online Access: | http://ndltd.ncl.edu.tw/handle/84319590936903201801 |