Barrier Properties of TaNx and TaSixNy for Cu Metallization

碩士 === 逢甲大學 === 電機工程學系 === 88 === This thesis studies the barrier properties of TaNx and TaSixNy films for Cu metallization. First, the characteristics of the TaNx films deposited by reactively sputtering with various nitrogen flow ratios were investigated. It is found that the phase of T...

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Bibliographic Details
Main Authors: Chi-chang Wu, 吳其昌
Other Authors: Wen Luh Yang
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/84319590936903201801