Study on Characteristics of Cobalt Silicide Applied in Junctions and Gates
碩士 === 逢甲大學 === 電機工程學系 === 88 === In this thesis, we study the characteristics for cobalt silicide(CoSi2) formed by different technologies applied in shallow junction and capacitance. First, we make pre-implantation by N2+ to form cobalt silicide, then use SADS technology to diffusion imp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23067721983734775466 |